Information Density in Multi-Layer Resistive Memories

Resistive memories store information in a crossbar arrangement of two-terminal devices that can be programmed to patterns high or low resistance. While extremely compact, this technology suffers from the "sneak-path" problem: certain cannot recovered, as multiple resistances parallel make resistance indistinguishable In paper, multi-layer device is considered, and number bits it derived exactly asymptotic bounds are developed. The density series isolated arrays with extreme aspect ratios single- cases without peripheral selection circuitry. This shown non-zero limit, unlike moderate previously considered. A simple encoding scheme achieves capacity asymptotically presented.